US 11,939,659 B2
Deposition mask group, manufacturing method of electronic device, and electronic device
Takuya Higuchi, Tokyo (JP); Hiromitsu Ochiai, Tokyo (JP); and Hiroki Oka, Tokyo (JP)
Assigned to Dai Nippon Printing Co., Ltd., Tokyo (JP)
Filed by Dai Nippon Printing Co., Ltd., Tokyo (JP)
Filed on Dec. 27, 2022, as Appl. No. 18/146,490.
Application 18/146,490 is a continuation of application No. 17/305,614, filed on Jul. 12, 2021, granted, now 11,649,539.
Application 17/305,614 is a continuation of application No. PCT/JP2020/002312, filed on Jan. 23, 2020.
Claims priority of application No. 2019-016274 (JP), filed on Jan. 31, 2019.
Prior Publication US 2023/0132323 A1, Apr. 27, 2023
Int. Cl. C23C 14/04 (2006.01); H01L 21/285 (2006.01); H10K 50/82 (2023.01)
CPC C23C 14/042 (2013.01) [H01L 21/28506 (2013.01); H10K 50/82 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A deposition mask group comprising:
a first deposition mask having two or more first through holes arranged along a first direction; and
a second deposition mask having two or more second through holes,
wherein the first deposition mask includes a first surface and a second surface,
wherein each of the two or more first through holes includes an end portion located on the first surface and an end portion located on the second surface,
wherein a profile of each of the two of more first through holes is a profile of the end portion of each of the two or more first through holes on the first surface,
wherein the two or more first through holes include two or more mask first main areas arranged along a second direction intersecting the first direction and two or more mask first extension areas extending to connect two of the two or more mask first main areas adjacent to each other in the second direction, each of the two or more mask first extension areas having a dimension smaller than a dimension of each of the two or more mask first main areas in a direction orthogonal to the second direction,
wherein the dimension of each of the two or more mask first main areas and the dimension of each of the two or more mask first extension areas are determined based on the profile of the end portion of each of the two or more first through holes on the first surface, and
wherein the each of the two or more first through holes partly overlaps each of the two or more second through holes when the first deposition mask and the second deposition mask are overlapped.