CPC B81C 1/00698 (2013.01) [B81B 3/0018 (2013.01); B81B 2201/0271 (2013.01); B81C 2203/0145 (2013.01)] | 9 Claims |
1. A microelectromechanical structure, comprising:
a functional element situated in a cavity of the microelectromechanical structure, the functional element including an aluminum nitride layer;
wherein the cavity is closed by a cap layer, the cap layer including epitaxial silicon,
wherein the aluminum nitride layer includes an insulating layer at an edge of the functional element,
wherein the functional element includes a first silicon layer and a second silicon layer, the aluminum nitride layer being situated between the first silicon layer and the second silicon layer, and
wherein the insulating layer separates the upper and lower silicon layers at the edge.
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