US 11,938,745 B2
Method for structuring an anti-counterfeit marking in an at least partially transparent object and at least partially transparent object comprising an anti-counterfeit marking
Alexis Boulmay, Valdahon (FR); and Damien Le Boudouil, Morteau (FR)
Assigned to Comadur SA, Le Locle (CH)
Filed by Comadur SA, Le Locle (CH)
Filed on Aug. 8, 2022, as Appl. No. 17/882,786.
Claims priority of application No. 21195595 (EP), filed on Sep. 8, 2021.
Prior Publication US 2023/0070336 A1, Mar. 9, 2023
Int. Cl. B41M 3/14 (2006.01); C03C 15/00 (2006.01); C03C 23/00 (2006.01); C09D 1/00 (2006.01); C23C 14/06 (2006.01); C23C 16/34 (2006.01); C23C 16/513 (2006.01); G04D 3/00 (2006.01)
CPC B41M 3/14 (2013.01) [C03C 15/00 (2013.01); C03C 23/0055 (2013.01); C09D 1/00 (2013.01); C23C 14/0641 (2013.01); C23C 16/34 (2013.01); C23C 16/513 (2013.01); G04D 3/0069 (2013.01); C03C 23/006 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for structuring an anti-counterfeit marking (18) in the thickness of an at least partially transparent object (1) made from an at least partially transparent amorphous, semi-crystalline or crystalline material, the at least partially transparent object (1) comprising a top surface (2) and a bottom surface (4) which extends at a distance from the top surface (2), the method comprising the successive steps of:
obtaining the at least partially transparent object (1);
providing one of the top (2) or bottom (4) surfaces of the at least partially transparent object (1) with a mask (6) which defines at least one opening (8) wherein the contour corresponds to the profile of the anti-counterfeit marking to be structured, the mask (6) covering the surface of the at least partially transparent object (1) at the areas that are not to be structured;
structuring the anti-counterfeit marking by bombarding, using nitrogen N ions accelerated at a voltage of 28 kV for a duration of 1.53 s/cm2 and with the ion implantation dose being 3.5×1016 ions/cm2 and with the ion beam intensity being 5.5 mA, the at least partially transparent object (1) by a single- or multicharged ion beam (14) through the at least one opening (8) of the mask (6), the mechanical properties of the mask (6) being sufficient to prevent the ions of the ion beam (14) from etching the surface of the at least partially transparent object (1) at the areas where this surface is covered by the mask (6);
removing the mask (6);
placing the at least partially transparent object (1) in a bath (16) at alkaline pH.