US 11,937,427 B2
Method for forming three-dimensional memory device with sacrificial channels
Shuangshuang Peng, Wuhan (CN); Jingjing Geng, Wuhan (CN); Jiajia Wu, Wuhan (CN); and Tuo Li, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on May 24, 2021, as Appl. No. 17/329,103.
Application 17/329,103 is a division of application No. 16/881,268, filed on May 22, 2020, granted, now 11,800,707.
Application 16/881,268 is a continuation of application No. PCT/CN2020/082533, filed on Mar. 31, 2020.
Prior Publication US 2021/0305277 A1, Sep. 30, 2021
Int. Cl. H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/35 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A method for forming a three-dimensional (3D) memory device, comprising:
forming a first opening extending vertically through a first dielectric deck comprising a first plurality of interleaved sacrificial layers and dielectric layers above a substrate;
subsequently forming a high dielectric constant (high-k) dielectric layer and a channel sacrificial layer free of polysilicon along a sidewall of the first opening;
forming a second opening extending vertically through a second dielectric deck comprising a second plurality of interleaved sacrificial layers and dielectric layers on the first dielectric deck to expose the channel sacrificial layer in the first opening;
forming another high-k dielectric layer along the sidewall of the second opening;
removing the channel sacrificial layer in the first opening; and
subsequently forming a memory film and a semiconductor channel over the high-k dielectric layer along sidewalls of the first and second openings,
wherein after removing the channel sacrificial layer in the first opening, the high-k dielectric layer is in contact with the another high-k dielectric layer.