US 11,935,927 B2
Bipolar transistor with collector contact
Hong Yu, Clifton Park, NY (US); and Vibhor Jain, Williston, VT (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Mar. 1, 2022, as Appl. No. 17/684,321.
Claims priority of provisional application 63/277,810, filed on Nov. 10, 2021.
Prior Publication US 2023/0143396 A1, May 11, 2023
Int. Cl. H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/737 (2006.01)
CPC H01L 29/41708 (2013.01) [H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/66242 (2013.01); H01L 29/735 (2013.01); H01L 29/737 (2013.01); H01L 29/0808 (2013.01); H01L 29/0817 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a lateral bipolar transistor comprising an emitter, a base and a collector;
an emitter contact to the emitter;
a base contact to the base; and
a collector contact to the collector and extending to an underlying semiconductor substrate underneath the collector.