CPC H01L 21/02293 (2013.01) [C30B 23/025 (2013.01); C30B 25/183 (2013.01); C30B 29/04 (2013.01); C30B 29/06 (2013.01)] | 18 Claims |
1. A process for producing a monocrystalline layer of diamond material, comprising transferring a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of diamond material.
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