CPC G11C 16/344 (2013.01) [G11C 16/0425 (2013.01); G11C 16/0466 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01)] | 20 Claims |
1. A non-volatile memory, comprising:
an array of non-volatile memory cells arranged in rows to be selected by word lines and columns to be selected, for writing and reading;
a plurality of reference word lines comprising first reference word lines and second reference word lines, each to select corresponding supplemental non-volatile memory cells from the first reference word line and reference non-volatile cells from the second reference word line;
a plurality of sense amplifiers arranged to:
read, using a comparison of the supplemental non-volatile memory cells of the first reference word lines to the reference non-volatile memory cells of the second reference word lines, system data that has been written to the supplemental non-volatile memory cells of the first reference word lines after an erase operation; and
a processing element to determine a status of the erase operation of the non-volatile memory, based on reading the system data that has been written to the supplemental non-volatile memory cells of the first reference word lines.
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