US 11,932,962 B2
Systems and methods for production of silicon using a horizontal magnetic field
JaeWoo Ryu, Chesterfield, MO (US); JunHwan Ji, Cheonan-Si (KR); WooJin Yoon, Cheonan-Si (KR); Richard J. Phillips, St. Peters, MO (US); and Carissima Marie Hudson, St. Charles, MO (US)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Apr. 5, 2022, as Appl. No. 17/658,049.
Application 17/658,049 is a division of application No. 17/115,154, filed on Dec. 8, 2020.
Claims priority of provisional application 62/947,785, filed on Dec. 13, 2019.
Prior Publication US 2022/0228291 A1, Jul. 21, 2022
Int. Cl. C30B 15/10 (2006.01); C30B 15/20 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01)
CPC C30B 15/10 (2013.01) [C30B 15/20 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A system for producing a silicon ingot, the system comprising:
a natural sand crucible to contain a silicon melt, the crucible having an inner wall with a cristobalite layer having a thickness of between 0.25 mm and 1.25 mm formed thereon;
magnetic poles to produce a horizontal magnetic field; and
a controller programmed to produce the silicon ingot by:
rotating the natural sand crucible containing the silicon melt at between two revolutions per minute and five revolutions per minute;
applying a horizontal magnetic field to the crucible using the magnetic poles;
contacting the silicon melt with a seed crystal; and
withdrawing the seed crystal from the silicon melt while rotating the natural sand crucible at between two revolutions per minute and five revolutions per minute to form the silicon ingot.