CPC C30B 15/10 (2013.01) [C30B 15/20 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01)] | 7 Claims |
1. A system for producing a silicon ingot, the system comprising:
a natural sand crucible to contain a silicon melt, the crucible having an inner wall with a cristobalite layer having a thickness of between 0.25 mm and 1.25 mm formed thereon;
magnetic poles to produce a horizontal magnetic field; and
a controller programmed to produce the silicon ingot by:
rotating the natural sand crucible containing the silicon melt at between two revolutions per minute and five revolutions per minute;
applying a horizontal magnetic field to the crucible using the magnetic poles;
contacting the silicon melt with a seed crystal; and
withdrawing the seed crystal from the silicon melt while rotating the natural sand crucible at between two revolutions per minute and five revolutions per minute to form the silicon ingot.
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