US 11,930,724 B2
Phase change memory cell spacer
Injo Ok, Loudonville, NY (US); Nicole Saulnier, Slingerlands, NY (US); Muthumanickam Sankarapandian, Niskayuna, NY (US); Andrew Herbert Simon, Fishkill, NY (US); Steven Michael McDermott, Wynantskill, NY (US); and Iqbal Rashid Saraf, Glenmont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 20, 2021, as Appl. No. 17/407,519.
Prior Publication US 2023/0058218 A1, Feb. 23, 2023
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/801 (2023.02) [H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02); H10N 70/8828 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A method of manufacturing a phase change memory (PCM) cell, the method comprising:
forming a first electrode;
forming a heater on the first electrode;
forming a PCM material on the heater;
forming a second electrode on the PCM material;
forming a first shield around the PCM material, the first shield comprising a first reactive-ion-etching-resistant material; and
forming an electrical insulator surrounding the first shield.