CPC H10N 70/801 (2023.02) [H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02); H10N 70/8828 (2023.02)] | 13 Claims |
1. A method of manufacturing a phase change memory (PCM) cell, the method comprising:
forming a first electrode;
forming a heater on the first electrode;
forming a PCM material on the heater;
forming a second electrode on the PCM material;
forming a first shield around the PCM material, the first shield comprising a first reactive-ion-etching-resistant material; and
forming an electrical insulator surrounding the first shield.
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