CPC H10B 10/12 (2023.02) [H01L 21/02293 (2013.01); H01L 21/3065 (2013.01); H01L 21/823821 (2013.01); H01L 29/045 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01)] | 20 Claims |
1. A device, comprising:
a substrate;
a pull-down transistor over the substrate;
a pass-gate transistor over the substrate; and
a pull-up transistor over the substrate, comprising:
a first gate structure; and
first source/drain epitaxy structures on opposite sides of the first gate structure, wherein each of the first source/drain epitaxy structures comprises a first epitaxy layer and a second epitaxy layer over the first epitaxy layer, wherein a germanium concentration of the first epitaxy layer is higher than a germanium concentration of the second epitaxy layer.
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