US 11,929,591 B2
Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device
Masahiro Murayama, Kanagawa (JP); and Takashi Sugiyama, Miyagi (JP)
Assigned to SONY CORPORATION, Tokyo (JP)
Appl. No. 16/979,606
Filed by SONY CORPORATION, Tokyo (JP)
PCT Filed Feb. 15, 2019, PCT No. PCT/JP2019/005605
§ 371(c)(1), (2) Date Sep. 10, 2020,
PCT Pub. No. WO2019/181309, PCT Pub. Date Sep. 26, 2019.
Claims priority of application No. 2018-050642 (JP), filed on Mar. 19, 2018.
Prior Publication US 2021/0044088 A1, Feb. 11, 2021
Int. Cl. H01S 5/22 (2006.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/343 (2006.01)
CPC H01S 5/22 (2013.01) [H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/34333 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting device, comprising:
a stacked body that includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order, wherein the stacked body has paired side faces opposed to each other;
a cutout section that is on at least one of the paired side faces of the stacked body, wherein the cutout section has a bottom face where the first conductive-type semiconductor layer is exposed; and
a high-resistance region that is in vicinity of the bottom face of the cutout section and the side face of the stacked body, wherein the high-resistance region has electric resistance higher than electric resistance of the stacked body in a periphery of the high-resistance region.