US 11,929,438 B2
Oxide semiconductor and transistor
Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Sep. 14, 2022, as Appl. No. 17/944,561.
Application 16/572,910 is a division of application No. 15/602,299, filed on May 23, 2017, granted, now 10,461,197, issued on Oct. 29, 2019.
Application 17/944,561 is a continuation of application No. 16/572,910, filed on Sep. 17, 2019, granted, now 11,482,625.
Claims priority of application No. 2016-112153 (JP), filed on Jun. 3, 2016; and application No. 2016-113026 (JP), filed on Jun. 6, 2016.
Prior Publication US 2023/0013303 A1, Jan. 19, 2023
Int. Cl. H01L 29/51 (2006.01); C23C 14/06 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7869 (2013.01) [C23C 14/0676 (2013.01); C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/24 (2013.01); H01L 29/4908 (2013.01); H01L 29/518 (2013.01); H01L 29/66969 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A transistor comprising:
an oxide semiconductor layer; and
a gate insulating film in contact with the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises a plurality of first regions and a second region,
wherein each region of the plurality of first regions comprises an element M,
wherein the element M is one or more of Al, Si, Y, B, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu,
wherein the second region includes indium,
wherein an atomic ratio of indium to the element M in the second region is greater than an atomic ratio of indium to the element M in the first region, and
wherein the plurality of first regions and the second region are arranged in a mosaic pattern.