US 11,929,426 B2
Semiconductor device and method for manufacturing the semiconductor device
Shunpei Yamazaki, Tokyo (JP); Naoki Okuno, Kanagawa (JP); and Hiroki Komagata, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/270,492
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Aug. 26, 2019, PCT No. PCT/IB2019/057133
§ 371(c)(1), (2) Date Feb. 23, 2021,
PCT Pub. No. WO2020/049396, PCT Pub. Date Mar. 21, 2020.
Claims priority of application No. 2018-166305 (JP), filed on Sep. 5, 2018.
Prior Publication US 2021/0320192 A1, Oct. 14, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 21/383 (2006.01); H01L 21/443 (2006.01); H01L 27/12 (2006.01); H01L 29/40 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/66969 (2013.01) [H01L 21/383 (2013.01); H01L 21/443 (2013.01); H01L 29/401 (2013.01); H01L 27/1207 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
depositing a first oxide semiconductor film;
depositing a first conductive film over the first oxide semiconductor film;
removing part of the first oxide semiconductor film and part of the first conductive film, thereby forming a stacked-layer structure of a first oxide semiconductor and a first conductor;
depositing a first insulating film over the first oxide semiconductor and the first conductor, and then forming a first insulator by planarizing the first insulating film;
forming a second conductor, a third conductor, and an opening exposing part of the first oxide semiconductor by removing part of the first insulator and part of the first conductor;
depositing a second oxide semiconductor film in contact with an exposed region of the first oxide semiconductor;
depositing a second insulating film over the second oxide semiconductor film;
performing microwave-excited plasma treatment on the second insulating film with a pressure of higher than or equal to 400 Pa;
depositing a second conductive film over the second insulating film; and
removing part of the second conductive film, part of the second insulating film, and part of the second oxide semiconductor film, thereby exposing the first insulator and forming a second conductor, a second insulator, and a second oxide semiconductor that are embedded in the opening.