	US 11,929,416 B2
	Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Setagaya (JP); Ryo Tokumaru, Isehara (JP); Shinya Sasagawa, Chigasaki (JP); and Tomonori Nakayama, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/272,399
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Sep. 2, 2019, PCT No. PCT/IB2019/057373 § 371(c)(1), (2) Date Mar. 1, 2021, PCT Pub. No. WO2020/053697, PCT Pub. Date Mar. 19, 2020.
Claims priority of application No. 2018-171617 (JP), filed on Sep. 13, 2018.
Prior Publication US 2021/0328037 A1, Oct. 21, 2021
Int. Cl. H01L 29/45 (2006.01); H01L 21/441 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)

CPC H01L 29/45 (2013.01) [H01L 21/441 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01)]

4 Claims

1. A semiconductor device comprising:

a first oxide;

a second oxide over the first oxide;

a first insulator over the second oxide;

a first conductor over the first insulator; and

a second conductor and a third conductor over the second oxide,

wherein the second conductor comprises a first region and a second region,

wherein the third conductor comprises a third region and a fourth region,

wherein the second region is positioned above the first region,

wherein the fourth region is positioned above the third region,

wherein each of the second conductor and the third conductor comprises tantalum and nitrogen,

wherein an atomic ratio of nitrogen to tantalum in the first region is higher than an atomic ratio of nitrogen to tantalum in the second region,

wherein an atomic ratio of nitrogen to tantalum in the third region is higher than an atomic ratio of nitrogen to tantalum in the fourth region,

wherein the second conductor further comprises a fifth region,

wherein the third conductor further comprises a sixth region,

wherein the fifth region is positioned above the second region,

wherein the sixth region is positioned above the fourth region,

wherein an atomic ratio of nitrogen to tantalum in the fifth region is higher than the atomic ratio of nitrogen to tantalum in the second region, and

wherein an atomic ratio of nitrogen to tantalum in the sixth region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.