US 11,929,413 B2
Semiconductor device structure with metal gate stack
Jia-Chuan You, Taoyuan County (TW); Huan-Chieh Su, Changhua County (TW); Kuo-Cheng Chiang, Zhubei (TW); and Chih-Hao Wang, Baoshan Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 22, 2022, as Appl. No. 17/871,528.
Application 17/871,528 is a continuation of application No. 16/943,672, filed on Jul. 30, 2020, granted, now 11,417,745.
Prior Publication US 2022/0359695 A1, Nov. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/42376 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/7856 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first channel structure and a second channel structure over a substrate, wherein the second channel structure is longer than the first channel structure;
a first gate stack over the first channel structure, wherein the first gate stack has a first width;
a first gate spacer extending along a sidewall of the first gate stack;
a second gate stack over the second channel structure, wherein the first gate stack has a first work function layer and a first conductive layer, the second gate stack has a second work function layer and a second conductive layer, the first work function layer and the second work function layer are made of a same material, the first conductive layer and the second conductive layer are made of a same material, and the first conductive layer is thicker than the second conductive layer; and
a second gate spacer extending along a sidewall of the second gate stack, wherein the second gate stack has a portion extending along the second gate spacer, the portion of the second gate stack has a second width, and half of the first width is greater than the second width.