US 11,929,410 B2
Method for fabricating hydrogen treated surface of semiconductor device with buried gate
Jin Woong Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Mar. 24, 2021, as Appl. No. 17/211,184.
Claims priority of application No. 10-2020-0125733 (KR), filed on Sep. 28, 2020.
Prior Publication US 2022/0102514 A1, Mar. 31, 2022
Int. Cl. H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/4236 (2013.01) [H01L 21/31116 (2013.01); H01L 21/823462 (2013.01); H01L 29/42368 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
providing a substrate having a front surface and a rear surface opposite to the front surface;
forming a trench in the front surface of the substrate;
forming a gate dielectric layer over the trench;
forming a gate electrode that fills a bottom portion of the trench over the gate dielectric layer;
forming a sealing layer that includes a first portion covering the gate electrode, the gate dielectric layer, and the front surface of the substrate, and a second portion covering the rear surface of the substrate;
selectively removing the second portion of the sealing layer;
performing an annealing process to form a hydrogen treated surface on an interface between the trench and the gate dielectric layer; and
forming a capping layer that covers the rear and front surfaces of the substrate, after the performing of the annealing process.