CPC H01L 29/4236 (2013.01) [H01L 21/31116 (2013.01); H01L 21/823462 (2013.01); H01L 29/42368 (2013.01)] | 20 Claims |
1. A method for fabricating a semiconductor device, comprising:
providing a substrate having a front surface and a rear surface opposite to the front surface;
forming a trench in the front surface of the substrate;
forming a gate dielectric layer over the trench;
forming a gate electrode that fills a bottom portion of the trench over the gate dielectric layer;
forming a sealing layer that includes a first portion covering the gate electrode, the gate dielectric layer, and the front surface of the substrate, and a second portion covering the rear surface of the substrate;
selectively removing the second portion of the sealing layer;
performing an annealing process to form a hydrogen treated surface on an interface between the trench and the gate dielectric layer; and
forming a capping layer that covers the rear and front surfaces of the substrate, after the performing of the annealing process.
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