US 11,929,384 B2
Image sensors and electronic devices
Kyung Bae Park, Hwaseong-si (KR); Yong Wan Jin, Seoul (KR); Sung Young Yun, Suwon-si (KR); Sung Jun Park, Yongin-si (KR); Feifei Fang, Suwon-si (KR); and Chul Joon Heo, Busan (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 20, 2023, as Appl. No. 18/186,402.
Application 18/186,402 is a continuation of application No. 17/097,329, filed on Nov. 13, 2020, granted, now 11,616,092, issued on Mar. 28, 2023.
Claims priority of application No. 10-2020-0012101 (KR), filed on Jan. 31, 2020.
Prior Publication US 2023/0299115 A1, Sep. 21, 2023
Int. Cl. H01L 27/146 (2006.01); H01L 31/0352 (2006.01)
CPC H01L 27/14647 (2013.01) [H01L 31/035209 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a first photo-sensing device on a semiconductor substrate, the first photo-sensing device being configured to sense light in a first wavelength spectrum associated with a first color;
a second photo-sensing device integrated in the semiconductor substrate, the second photo-sensing device being configured to sense light in a second wavelength spectrum associated with a second color; and
a third photo-sensing device integrated in the semiconductor substrate, the third photo-sensing device being configured to sense light in a third wavelength spectrum associated with a third color,
wherein the first photo-sensing device and the second photo-sensing device are overlapped with each other in a thickness direction of the semiconductor substrate, the thickness direction being perpendicular to an upper surface of the semiconductor substrate,
wherein the first photo-sensing device and the third photo-sensing device are overlapped with each other in the thickness direction of the semiconductor substrate,
wherein the second photo-sensing device and the third photo-sensing device each include
an upper surface that is proximate to the upper surface of the semiconductor substrate,
a lower surface facing the upper surface and distal from the upper surface of the semiconductor substrate, and
a doped region between the upper surface and the lower surface,
wherein the upper surface of the third photo-sensing device is distal from the upper surface of the semiconductor substrate in relation to the upper surface of the second photo-sensing device,
wherein a wavelength selectivity of the third wavelength spectrum relative to the second wavelength spectrum of the third photo-sensing device varies depending on a depth of the upper surface of the third photo-sensing device from the upper surface of the semiconductor substrate in the thickness direction, and
wherein the depth of the upper surface of the third photo-sensing device from the upper surface of the semiconductor substrate in the thickness direction is a depth D3 that satisfies Relationship Equation 1,
EQE(λ3)≥3×EQE(λ2)  [Relationship Equation 1]
wherein, in Relationship Equation 1,
EQE (λ3) is external quantum efficiency at a wavelength (λ3) included in the third wavelength spectrum of the third photo-sensing device based on the depth of the upper surface of the third photo-sensing device in the semiconductor substrate being the depth D3, and
EQE (λ2) is external quantum efficiency at a wavelength (λ2) included in the second wavelength spectrum of the third photo-sensing device based on the depth of the upper surface of the third photo-sensing device in the semiconductor substrate being the depth D3.