US 11,929,382 B2
Shallow trench textured regions and associated methods
Homayoon Haddad, Beaverton, OR (US); and Jutao Jiang, Tigard, OR (US)
Assigned to SIONYX, INC., Beverly, MA (US)
Filed by SiOnyx, LLC, Beverly, MA (US)
Filed on Jul. 7, 2021, as Appl. No. 17/369,384.
Application 17/369,384 is a continuation of application No. 16/505,283, filed on Jul. 8, 2019, granted, now 11,069,737.
Application 16/505,283 is a continuation of application No. 15/614,256, filed on Jun. 5, 2017, granted, now 10,347,682, issued on Jul. 9, 2019.
Application 15/614,256 is a continuation of application No. 14/884,181, filed on Oct. 15, 2015, granted, now 9,673,250, issued on Jun. 6, 2017.
Application 14/884,181 is a continuation of application No. 14/084,392, filed on Nov. 19, 2013, granted, now 9,209,345, issued on Dec. 8, 2015.
Claims priority of provisional application 61/841,326, filed on Jun. 29, 2013.
Prior Publication US 2021/0335878 A1, Oct. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); B23K 26/352 (2014.01); B82Y 40/00 (2011.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01)
CPC H01L 27/14643 (2013.01) [B23K 26/355 (2018.08); B82Y 40/00 (2013.01); H01L 27/14625 (2013.01); H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 27/14632 (2013.01); H01L 27/1464 (2013.01); H01L 27/14689 (2013.01); H01L 31/02327 (2013.01); H01L 31/028 (2013.01); H01L 31/182 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optoelectronic image sensor device having enhanced absorption of electromagnetic radiation, comprising:
a semiconductor layer coupled to a support substrate; and
an array of shallow trench isolation surface features formed on at least a portion of a surface of the support substrate and positioned between the semiconductor layer and the support substrate, the surface features positioned to interact with electromagnetic radiation that passes through the semiconductor layer.