US 11,929,381 B2
Image sensor and a method of fabricating the same
Han Seok Kim, Seoul (KR); Byung Jun Park, Yongin-si (KR); Jin Ju Jeon, Yongin-si (KR); and Hee Geun Jeong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 30, 2020, as Appl. No. 17/138,112.
Claims priority of application No. 10-2020-0050140 (KR), filed on Apr. 24, 2020.
Prior Publication US 2021/0335877 A1, Oct. 28, 2021
Int. Cl. H01L 27/14 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/14643 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/1464 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a substrate which comprises a first surface and a second surface opposite each other;
a plurality of pixels, each pixel comprising a photoelectric conversion layer in the substrate;
a pixel separation pattern disposed in the substrate and separating the pixels;
a first and second color filters on the second surface; and
a color filter separation structure including a first layer, a second layer on the first layer, and a third layer on the second layer; and a fourth layer on the third layer,
wherein the color filter separation structure is disposed between the first and second color filters, and
wherein the first layer includes a titanium nitride, the second layer includes a tungsten, the third layer includes a silicon oxide, and the fourth layer includes an aluminum oxide.