US 11,929,342 B2
Semiconductor device with leads having step surfaces
Futoshi Tsukada, Nagano (JP); Yukinori Hatori, Nagano (JP); and Yoshiyuki Sawamura, Nagano (JP)
Assigned to SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano (JP)
Filed by SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano (JP)
Filed on Oct. 28, 2020, as Appl. No. 17/082,531.
Claims priority of application No. 2019-196951 (JP), filed on Oct. 30, 2019; and application No. 2020-095751 (JP), filed on Jun. 1, 2020.
Prior Publication US 2021/0134754 A1, May 6, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/36 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01)
CPC H01L 24/45 (2013.01) [H01L 23/295 (2013.01); H01L 23/36 (2013.01); H01L 23/49861 (2013.01); H01L 23/5386 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a lead frame including a lead that has a first end and a second end opposite to the first end;
a wiring substrate that is provided on the lead frame;
an electronic component that is provided between the lead frame and the wiring substrate;
a connection member that is provided between the lead frame and the wiring substrate and connects the lead frame and the wiring substrate; and
an encapsulating resin that is filled between the lead frame and the wiring substrate and covers the electronic component and the connection member, wherein
the lead includes:
a first surface opposed to the wiring substrate and covered by the encapsulating resin;
a second surface located on an opposite side of the lead than the first surface and exposed from the encapsulating resin;
an end surface of the second end covered by the encapsulating resin; and
an end surface of the first end exposed from a side surface of the encapsulating resin,
the second surface of the lead includes a step formed adjacent to the end surface of the first end and exposed from the encapsulating resin, and
a surface of the encapsulating resin from which the second surface of the lead is exposed includes another step formed adjacent to the step of the second surface of the lead.