US 11,929,305 B2
Electrostatic discharge protection circuit having a metal connection and method for manufacturing the electrostatic discharge protection circuit
Andre Schmenn, Sachsenkam (DE); Klaus Diefenbeck, Munich (DE); and Joost Adriaan Willemen, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Nov. 22, 2021, as Appl. No. 17/532,446.
Claims priority of application No. 20209267 (EP), filed on Nov. 23, 2020.
Prior Publication US 2022/0165646 A1, May 26, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 21/822 (2006.01); H01L 23/482 (2006.01); H01L 27/02 (2006.01); H01L 21/56 (2006.01)
CPC H01L 23/4825 (2013.01) [H01L 21/822 (2013.01); H01L 27/0292 (2013.01); H01L 21/56 (2013.01); H01L 27/0255 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first electrostatic discharge protection device structure in a first area on a front side of a semiconductor substrate;
forming a first contact pad on the first electrostatic discharge protection device structure and a second contact pad in a second area on the front side of the semiconductor substrate;
thinning the semiconductor substrate from a back side of the semiconductor substrate;
forming a metal connection connecting the first electrostatic discharge protection device structure to the second area; and
providing a carrier material to the back side of the semiconductor substrate after forming the metal connection.