US 11,929,279 B2
Semiconductor device including semiconductor liner and method for fabricating the same
Jin Woong Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jan. 19, 2021, as Appl. No. 17/152,390.
Claims priority of application No. 10-2020-0124457 (KR), filed on Sep. 25, 2020.
Prior Publication US 2022/0102193 A1, Mar. 31, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/762 (2006.01); H10B 12/00 (2023.01)
CPC H01L 21/76224 (2013.01) [H01L 21/0245 (2013.01); H01L 21/02502 (2013.01); H01L 21/02661 (2013.01); H01L 21/02664 (2013.01); H10B 12/34 (2023.02); H01L 21/76229 (2013.01)] 20 Claims
OG exemplary drawing
 
12. A method for fabricating a semiconductor device, the method comprising:
forming a trench defining an active region in a substrate;
performing a first pretreatment in which a native oxide formed on the trench is replaced with a solid salt and the solid salt is sublimated to expose a surface of the trench;
forming a first polysilicon liner over the trench;
performing a post-treatment to remove a contaminant formed on the first polysilicon liner;
performing a second pretreatment in which a native oxide formed on the first polysilicon liner is replaced with a solid salt and the solid salt is sublimated to expose a surface of the first poly silicon liner;
forming a second polysilicon liner over the first polysilicon liner; and
forming a device isolation layer filing the trench over the second polysilicon liner.