US 11,929,272 B2
Substrate processing apparatus, substrate support, and method of manufacturing semiconductor device
Kenichi Suzaki, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Jul. 31, 2020, as Appl. No. 16/944,299.
Claims priority of application No. 2019-140606 (JP), filed on Jul. 31, 2019; and application No. 2020-125259 (JP), filed on Jul. 22, 2020.
Prior Publication US 2021/0035835 A1, Feb. 4, 2021
Int. Cl. H01L 21/67 (2006.01); F27B 17/00 (2006.01); F27D 5/00 (2006.01); H01L 21/324 (2006.01); H01L 21/673 (2006.01)
CPC H01L 21/67309 (2013.01) [F27B 17/0025 (2013.01); F27D 5/0037 (2013.01); H01L 21/324 (2013.01); H01L 21/67109 (2013.01); H01L 21/67306 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a substrate support including:
a plurality of support columns made of metal; and
a plurality of supports installed at the plurality of support columns and configured to support a plurality of substrates in multiple stages;
a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and
a heater configured to heat the plurality of substrates accommodated in the process chamber,
wherein each of the plurality of supports comprises a plurality of support pins inserted into holes as recesses in the plurality of support columns and are fixed at predetermined intervals, wherein a diameter of the plurality of support columns is between 5 mm to 10 mm, and
wherein each of the plurality of support pins includes:
a metal portion made of metal that is directly connected to one of the plurality of support columns; and
a contact portion that has a semicircular columnar shape or a flat plate shape, is configured to make contact with one of the plurality of substrates, and is composed of a film of a non-metal material that covers the metal portion, wherein the non-metal material is at least one material selected from the group of silicon, silicon oxide, silicon nitride, and silicon carbide.