CPC H01L 21/67309 (2013.01) [F27B 17/0025 (2013.01); F27D 5/0037 (2013.01); H01L 21/324 (2013.01); H01L 21/67109 (2013.01); H01L 21/67306 (2013.01)] | 7 Claims |
1. A substrate processing apparatus, comprising:
a substrate support including:
a plurality of support columns made of metal; and
a plurality of supports installed at the plurality of support columns and configured to support a plurality of substrates in multiple stages;
a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and
a heater configured to heat the plurality of substrates accommodated in the process chamber,
wherein each of the plurality of supports comprises a plurality of support pins inserted into holes as recesses in the plurality of support columns and are fixed at predetermined intervals, wherein a diameter of the plurality of support columns is between 5 mm to 10 mm, and
wherein each of the plurality of support pins includes:
a metal portion made of metal that is directly connected to one of the plurality of support columns; and
a contact portion that has a semicircular columnar shape or a flat plate shape, is configured to make contact with one of the plurality of substrates, and is composed of a film of a non-metal material that covers the metal portion, wherein the non-metal material is at least one material selected from the group of silicon, silicon oxide, silicon nitride, and silicon carbide.
|