CPC H01G 4/10 (2013.01) [H01G 4/008 (2013.01); H01G 4/14 (2013.01)] | 10 Claims |
1. A method for forming a capacitor, comprising:
forming a plurality of bottom electrodes;
forming a supporter that surrounds outer walls of the bottom electrodes;
forming a dielectric layer formed over the bottom electrodes and the supporter; and
forming a top electrode over the dielectric layer,
wherein the forming of the top electrode comprises:
forming a silicon carbide layer on the dielectric layer; and
forming a silicon germanium layer on the silicon carbide layer to fill a gap between the bottom electrodes,
wherein an upper surface of the supporter is disposed at a lower level than upper surfaces of the bottom electrodes.
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