US 11,929,207 B2
Semiconductor device and method for fabricating the same
Seung-Muk Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jan. 3, 2022, as Appl. No. 17/567,655.
Application 17/567,655 is a continuation of application No. 16/677,928, filed on Nov. 8, 2019, granted, now 11,244,787.
Claims priority of application No. 10-2019-0037085 (KR), filed on Mar. 29, 2019.
Prior Publication US 2022/0122773 A1, Apr. 21, 2022
Int. Cl. H01G 4/10 (2006.01); H01G 4/008 (2006.01); H01G 4/14 (2006.01)
CPC H01G 4/10 (2013.01) [H01G 4/008 (2013.01); H01G 4/14 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for forming a capacitor, comprising:
forming a plurality of bottom electrodes;
forming a supporter that surrounds outer walls of the bottom electrodes;
forming a dielectric layer formed over the bottom electrodes and the supporter; and
forming a top electrode over the dielectric layer,
wherein the forming of the top electrode comprises:
forming a silicon carbide layer on the dielectric layer; and
forming a silicon germanium layer on the silicon carbide layer to fill a gap between the bottom electrodes,
wherein an upper surface of the supporter is disposed at a lower level than upper surfaces of the bottom electrodes.