US 11,928,338 B2
Method of measuring durability of nonvolatile memory device and method of performing wear-leveling in storage device using the same
Hyunkyo Oh, Yongin-si (KR); Sanghyun Choi, Seoul (KR); and Kangho Roh, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 4, 2021, as Appl. No. 17/393,643.
Claims priority of application No. 10-2020-0151649 (KR), filed on Nov. 13, 2020.
Prior Publication US 2022/0155971 A1, May 19, 2022
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0616 (2013.01) [G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 2212/7211 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of measuring durability of a nonvolatile memory device that includes a plurality of memory blocks, the method comprising:
periodically receiving a read command for a first memory block among the plurality of memory blocks;
periodically performing a read operation on first memory cells of the first memory block based on the read command, the first memory cells connected to a first wordline, the first wordline being determined in advance of the method of measuring durability;
periodically outputting at least one cell count value associated with the first memory block based on a result of the read operation; and
periodically storing durability information associated with the first memory block in response to a periodic reception of the durability information, the durability information being obtained by accumulating the at least one cell count value.