CPC G03F 1/24 (2013.01) [G03F 1/26 (2013.01)] | 38 Claims |
1. A blankmask for extreme ultraviolet lithography, comprising:
a substrate;
a reflective layer formed on the substrate; and
a phase shift layer formed on the reflective layer,
wherein the phase shift layer contains niobium (Nb) and tantalum (Ta),
wherein a content of tantalum (Ta) in the phase shift layer is 30 to 70 at %, and
wherein the phase shift layer has a relative reflectance of greater than 5% and lower than 20% with respect to the reflective layer in extreme ultraviolet exposure light having a wavelength of 13.5 nm.
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