US 11,927,649 B2
Magnetoresistance effect element
Shogo Yonemura, Tokyo (JP); Tomoyuki Sasaki, Tokyo (JP); and Shinto Ichikawa, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Mar. 8, 2021, as Appl. No. 17/194,694.
Claims priority of application No. 2020-041166 (JP), filed on Mar. 10, 2020.
Prior Publication US 2021/0318394 A1, Oct. 14, 2021
Int. Cl. G01R 33/09 (2006.01); G11B 5/39 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G01R 33/093 (2013.01) [G01R 33/098 (2013.01); G11B 5/3909 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A magnetoresistance effect element, comprising:
a first ferromagnetic layer;
a second ferromagnetic layer;
a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer; and
an insertion layer that is disposed at least one of a position between the first ferromagnetic layer and the nonmagnetic layer and a position between the second ferromagnetic layer and the nonmagnetic layer,
wherein the nonmagnetic layer is composed of an oxide containing Mg and Ga,
wherein the insertion layer is a ferromagnetic component containing Ga, and
wherein a Ga concentration of the insertion layer is lower than a Ga concentration of the nonmagnetic layer.