US 11,926,923 B2
Indium phosphide single crystal and indium phosphide single crystal substrate
Katsushi Hashio, Kobe (JP); Kazuaki Kounoike, Kobe (JP); and Takuya Yanagisawa, Kobe (JP)
Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
Appl. No. 17/049,726
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
PCT Filed Aug. 7, 2018, PCT No. PCT/JP2018/029680
§ 371(c)(1), (2) Date Oct. 22, 2020,
PCT Pub. No. WO2020/031274, PCT Pub. Date Feb. 13, 2020.
Prior Publication US 2021/0040644 A1, Feb. 11, 2021
Int. Cl. C30B 29/40 (2006.01); C30B 11/00 (2006.01)
CPC C30B 29/40 (2013.01) [C30B 11/00 (2013.01)] 8 Claims
OG exemplary drawing
 
1. An indium phosphide single crystal comprising a straight body portion having a cylindrical shape, wherein
a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface.