US 11,926,896 B2
Atomic layer deposition apparatus
Johannes Wesslin, Espoo (FI); Pekka Soininen, Espoo (FI); and Jonas Andersson, Espoo (FI)
Assigned to BENEQ OY, Espoo (FI)
Filed by BENEQ OY, Espoo (FI)
Filed on Sep. 27, 2023, as Appl. No. 18/475,355.
Application 18/475,355 is a continuation of application No. PCT/FI2022/050202, filed on Mar. 29, 2022.
Claims priority of application No. 20215374 (FI), filed on Mar. 30, 2021.
Prior Publication US 2024/0018652 A1, Jan. 18, 2024
Int. Cl. C23C 16/455 (2006.01)
CPC C23C 16/45544 (2013.01) [C23C 16/45561 (2013.01); C23C 16/45563 (2013.01); C23C 16/45582 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An atomic layer deposition apparatus having a reaction chamber disposed inside a vacuum chamber and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and configured to supply gases from outside the vacuum chamber to the reaction chamber, wherein the reaction chamber is a movable reaction chamber which is configured to be movable relative to the vacuum chamber and relative to the fixed gas manifold assembly, the atomic layer deposition apparatus further comprises:
a connection arrangement coupling the movable reaction chamber to the fixed gas manifold assembly, the connection arrangement comprises:
a flexible outer flange assembly surrounding the fixed gas manifold assembly, and
a first connection surface connecting to a second connection surface of the reaction chamber.