US 11,926,776 B2
Films comprising bright silver based quaternary nanostructures
Ravisubhash Tangirala, Fremont, CA (US); Jay Yamanaga, Campbell, CA (US); Wenzhou Guo, San Jose, CA (US); Christopher Sunderland, San Jose, CA (US); Ashenafi Damtew Mamuye, Milpitas, CA (US); Chunming Wang, Milpitas, CA (US); Eunhee Hwang, Suwon-si (KR); and Nahyoung Kim, Incheon (KR)
Assigned to SHOEI CHEMICAL INC., Tokyo (JP)
Filed by Shoei Chemical Inc., Tokyo (JP)
Filed on Jun. 22, 2022, as Appl. No. 17/846,357.
Application 17/846,357 is a continuation of application No. 17/166,788, filed on Feb. 3, 2021, granted, now 11,407,940.
Claims priority of provisional application 63/129,378, filed on Dec. 22, 2020.
Prior Publication US 2023/0002672 A1, Jan. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C09K 11/02 (2006.01); C08J 5/18 (2006.01); C09K 11/62 (2006.01); G02B 1/00 (2006.01); G02F 1/1335 (2006.01); G02F 1/13357 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01)
CPC C09K 11/621 (2013.01) [C08J 5/18 (2013.01); C09K 11/025 (2013.01); G02B 1/002 (2013.01); G02F 1/133603 (2013.01); G02F 1/133614 (2021.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C08J 2329/10 (2013.01); G02F 2202/36 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of preparing a film comprising Ag, In, Ga, and S (AIGS) nanostructures, comprising:
admixing at least one organic resin with AIGS nanostructures and at least one ligand to form an admixture;
preparing a first film comprising the admixture on a first barrier layer;
curing the film by UV irradiation and/or baking; and
encapsulating the first film between the first barrier layer and a second barrier layer;
wherein the encapsulated film exhibits a photon conversion efficiency (PCE) of greater than 32% at a peak emission wavelength of about 480-545 nm, when excited using a blue light source with a wavelength of about 450 nm;
wherein the nanostructures have an emission spectrum with a full width half maximum (FWHM) of less than 40 nm, and wherein the average diameter of the nanostructures is less than 10 nm by TEM.