US 11,917,930 B2
Resistance change device and storage device
Takao Kosaka, Mie (JP); and Hiroki Tokuhira, Kanagawa (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 31, 2021, as Appl. No. 17/462,819.
Claims priority of application No. 2021-044917 (JP), filed on Mar. 18, 2021.
Prior Publication US 2022/0302385 A1, Sep. 22, 2022
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01); G11C 13/00 (2006.01)
CPC H10N 70/8828 (2023.02) [H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/235 (2023.02); H10N 70/841 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); G11C 2013/008 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A resistance change device, comprising: a first electrode; a second electrode; and a stack disposed between the first electrode and the second electrode, and including a first layer containing a resistance change material and a second layer in contact with the first layer, wherein:
the resistance change material contains at least one of at least one first element selected from a group consisting of germanium, tin, lead, silicon, and carbon and at least one second element selected from a group consisting of antimony, bismuth, and arsenic, and at least one third element selected from a group consisting of tellurium, selenium, sulfur, and oxygen; and
the second layer contains a crystal material containing at least one selected from a group consisting of:
a first material having a composition represented by
(Tia1Zrb1Hfc1)x1Coy1Sb100-x1-y1  (1)
wherein a1, b1, and c1 are numbers representing atomic ratios satisfying 0≤a1≤1, 0≤b1≤1, 0≤c1≤1, and a1+b1+c1=1, and x1 and y1 are numbers representing atom % satisfying 30≤x1≤35, and 30≤y1≤35,
(Zra2Hfb2)x2Niy2Sn100-x2-y2  (2)
wherein a2 and b2 are numbers representing atomic ratios satisfying 0≤a2≤1, 0≤b2≤1, and a2+b2=1, and x2 and y2 are numbers representing atom % satisfying 30≤x2≤35, and 30≤y2≤35, or
Fex3(Nba3Zrb3Hfc3)y3(Sba4Snb4)100-x3-y3  (3)
wherein a3, b3, c3, a4, and b4 are numbers representing atomic ratios satisfying 0≤a3≤1, 0≤b3≤1, 0≤c3≤1, a1+b1+c1=1, 0≤a4≤1, 0≤b4≤1, and a4+b4=1, and x3 and y3 are numbers representing atom % satisfying 30≤x3≤35, and 30≤y3≤35;
a second material having a composition represented by
Fe100-x4-y4(Va5Hfb5Wc5)x4(Ala6Sib6)y4  (4)
wherein a5, b5, c5, a6, and b6 are numbers representing atomic ratios satisfying 0≤a5≤1, 0≤b5≤1, 0≤c5≤1, a5+b5+c5=1, 0≤a6≤1, 0≤b6≤1, and a6+b6=1, and x4 and y4 are numbers representing atom % satisfying 20≤x4≤30, and 20≤y4≤30; and
a third material having a composition represented by
Mg100-x5(Sia7Geb7Snc7)x5  (5)
wherein a7, b7, and c7 are numbers representing atomic ratios satisfying 0≤a7≤1, 0≤b7≤1, 0≤c7≤1, and a7+b7+c7=1, and x5 is a number representing atom % satisfying 30≤x5≤35.