US 11,917,882 B2
Light-emitting device, electronic device, and lighting device
Satoshi Seo, Kanagawa (JP); Toshiki Sasaki, Kanagawa (JP); Tsunenori Suzuki, Kanagawa (JP); Sachiko Kawakami, Kanagawa (JP); and Naoaki Hashimoto, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed on Nov. 25, 2020, as Appl. No. 17/104,398.
Application 17/104,398 is a continuation of application No. 15/866,879, filed on Jan. 10, 2018, granted, now 10,854,682.
Application 15/866,879 is a continuation of application No. 14/818,951, filed on Aug. 5, 2015, granted, now 9,876,056, issued on Jan. 23, 2018.
Claims priority of application No. 2014-162532 (JP), filed on Aug. 8, 2014; application No. 2014-162576 (JP), filed on Aug. 8, 2014; application No. 2014-241188 (JP), filed on Nov. 28, 2014; and application No. 2015-131156 (JP), filed on Jun. 30, 2015.
Prior Publication US 2021/0104580 A1, Apr. 8, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C07D 307/77 (2006.01); C09K 11/06 (2006.01); H01L 51/50 (2006.01); H10K 59/35 (2023.01); H10K 50/11 (2023.01); H10K 50/19 (2023.01); H10K 59/32 (2023.01); H10K 85/60 (2023.01); H10K 50/13 (2023.01); H10K 59/40 (2023.01); H10K 101/10 (2023.01); H10K 101/00 (2023.01)
CPC H10K 59/351 (2023.02) [C07D 307/77 (2013.01); C09K 11/06 (2013.01); H10K 50/11 (2023.02); H10K 50/19 (2023.02); H10K 59/32 (2023.02); H10K 85/622 (2023.02); H10K 85/633 (2023.02); H10K 85/636 (2023.02); H10K 85/6574 (2023.02); C09K 2211/1007 (2013.01); C09K 2211/1011 (2013.01); C09K 2211/1014 (2013.01); C09K 2211/1088 (2013.01); H10K 50/131 (2023.02); H10K 59/40 (2023.02); H10K 85/626 (2023.02); H10K 2101/10 (2023.02); H10K 2101/27 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A light-emitting device with a bottom emission structure, comprising:
a substrate;
a transistor comprising:
a first insulating layer over the substrate;
an oxide semiconductor layer over the first insulating layer;
a source electrode, a drain electrode, and a gate electrode over the oxide semiconductor layer; and
a second insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode;
an anode over the transistor;
a first light-emitting element configured to emit light through a first coloring layer so that blue light is extracted to an outside of the light-emitting device;
a second light-emitting element configured to emit light through a second coloring layer so that green light is extracted to the outside of the light-emitting device;
a third light-emitting element configured to emit light through a third coloring layer so that green light is extracted to the outside of the light-emitting device; and
a fourth light-emitting element,
wherein:
one of the source electrode and the drain electrode is electrically connected to the anode,
the anode is configured to function as a first electrode of one of the first to fourth light-emitting elements,
the first to fourth light-emitting elements comprise the same structure of a first EL layer and a second EL layer with a charge-generation layer therebetween,
the first EL layer includes a fluorescent substance configured to emit blue light, and
the second EL layer includes a phosphorescent substance configured to emit yellow light.