| CPC H10K 50/115 (2023.02) [H10K 71/135 (2023.02); H10K 71/421 (2023.02); H10K 71/441 (2023.02); H10K 50/13 (2023.02); H10K 50/805 (2023.02); H10K 71/00 (2023.02); H10K 2102/00 (2023.02)] | 25 Claims |
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1. A method for manufacturing a light-emitting device that is provided with, on a substrate, a light-emitting element including a first electrode, a second electrode, and a quantum dot layer interposed between the first electrode and the second electrode, the method comprising:
forming, on the substrate, the first electrode including an oxide semiconductor film on a surface of the first electrode; and
forming, subsequent to the forming the first electrode, the quantum dot layer;
the forming the quantum dot layer including;
performing first application that involves applying a first solution containing a plurality of quantum dots each including a core and a first shell with which the core is coated, a ligand to coordinate with each of the plurality of quantum dots, a first inorganic precursor, and a first solvent on a position overlapping with the substrate;
performing first light irradiation, subsequent to the performing first application, that involves irradiating with light, from above the substrate, the position where the first solution is applied, to melt the ligand and vaporize the first solvent;
performing second light irradiation, subsequent to the performing first light irradiation, that involves irradiating the position with light to raise a temperature of the quantum dot; and
performing third light irradiation, subsequent to the performing second light irradiation, that involves irradiating the position with light to cause the first inorganic precursor to epitaxially grow around the first shell so as to form a second shell with which the first shell is coated,
wherein, in the performing third light irradiation, at least one set of the quantum dots adjacent to each other is connected to each other via the second shell.
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