US 11,917,827 B2
Semiconductor memory device and method for manufacturing the same
Naoki Yasuda, Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Jan. 24, 2022, as Appl. No. 17/648,719.
Application 15/967,930 is a division of application No. 15/343,591, filed on Nov. 4, 2016, granted, now 9,991,274, issued on Jun. 5, 2018.
Application 17/648,719 is a continuation of application No. 16/750,261, filed on Jan. 23, 2020.
Application 16/750,261 is a continuation of application No. 15/967,930, filed on May 1, 2018, granted, now 10,580,786, issued on Mar. 3, 2020.
Application 15/343,591 is a continuation of application No. 14/645,682, filed on Mar. 12, 2015, granted, now 9,508,739, issued on Nov. 29, 2016.
Claims priority of provisional application 62/049,226, filed on Sep. 11, 2014.
Prior Publication US 2022/0149054 A1, May 12, 2022
Int. Cl. H01L 27/1157 (2017.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/35 (2023.02) [H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/0223 (2013.01); H01L 21/02326 (2013.01); H01L 29/1037 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/511 (2013.01); H01L 29/518 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a substrate;
a stacked body including a plurality of electrode members and a plurality of insulating members, each of the electrode members and each of the insulating members being stacked alternately in a first direction above the substrate;
a memory hole that extends in the stacked body in the first direction;
a first insulating member that is disposed to extend in the memory hole in the first direction;
a semiconductor member that is disposed between the stacked body and the first insulating member to extend in the first direction;
a charge storage member that is disposed between the semiconductor member and one of the plurality of electrode members; and
a second insulating member that is disposed between the semiconductor member and the charge storage member, the second insulating member including nitride, wherein
the plurality of electrode members includes a first electrode member and a second electrode member, the first electrode member and the second electrode member being arranged in the first direction,
a diameter of the memory hole at a position of the second electrode member is larger than a diameter of the memory hole at a position of the first electrode member in a second direction orthogonal to the first direction,
a thickness of the charge storage member at the position of the second electrode member is greater than a thickness of the charge storage member at the position of the first electrode member in the second direction, and
a thickness of the second insulating member at the position of the first electrode member is greater than a thickness of the second insulating member at the position of the second electrode member in the second direction.