US 11,917,824 B2
Semiconductor storage device and method for manufacturing semiconductor storage device
Takahiro Adachi, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 12, 2021, as Appl. No. 17/199,577.
Claims priority of application No. 2020-139687 (JP), filed on Aug. 20, 2020.
Prior Publication US 2022/0059563 A1, Feb. 24, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02)] 3 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor storage device, the method comprising:
forming a predetermined film;
forming a plurality of holes penetrating the predetermined film;
performing etching processing on the plurality of holes and a groove that couples the plurality of holes together with a width smaller than widths of the plurality of holes, to a predetermined depth of the predetermined film;
forming a sidewall layer on sidewalls of the plurality of holes and a sidewall of the groove to close the groove; and
further performing etching processing on the plurality of holes to penetrate the predetermined film, wherein
at a time of forming the predetermined film, forming the predetermined film as a first stacked body in which a plurality of first insulating layers and a plurality of second insulating layers are stacked alternately, and
at a time of forming the plurality of holes penetrating the predetermined film, forming a pair of first slits and a pair of second slits to penetrate the first stacked body, the pair of first slits having a longitudinal direction along a surface of each of layers of the first stacked body and having a width larger than a width of the groove, the pair of second slits having a longitudinal direction in a first direction and having a width larger than the width of the groove at positions on both sides of the pair of first slits separated from the pair of first slits.