CPC H10B 43/20 (2023.02) [H10B 43/10 (2023.02); H10B 43/30 (2023.02); H10B 43/40 (2023.02)] | 11 Claims |
1. A vertical semiconductor device, comprising:
a substrate;
a gate pad stack and a dummy gate pad stack that are formed over the substrate and divided by an asymmetric stepped trench;
a first dummy stack formed over the gate pad stack; and
a second dummy stack formed over the dummy gate pad stack,
wherein the first dummy stack and the second dummy stack are divided by a vertical trench, and
wherein the first and second dummy stacks are electrically isolated structures.
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