| CPC H10B 12/315 (2023.02) [H01L 23/528 (2013.01)] | 20 Claims |
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1. A semiconductor device comprising:
a gate structure on a substrate, the gate structure extending in a first direction parallel to an upper surface of the substrate and including,
a first conductive pattern,
a second conductive pattern on the first conductive pattern, and
a gate mask on the second conductive pattern; and
a contact plug contacting an end portion in the first direction of the gate structure, the contact plug including,
a first extension portion extending in a vertical direction perpendicular to the upper surface of the substrate and contacting sidewalls of the gate mask and the second conductive pattern,
a second extension portion under the first extension portion and contacting the first extension portion and a sidewall of the first conductive pattern, and
a protrusion portion under the second extension portion and contacting the second extension portion, a bottom of the protrusion portion not contacting the first conductive pattern,
wherein a first angle of a sidewall of the first extension portion with respect to the upper surface of the substrate is greater than a second angle of a sidewall of the second extension portion with respect to the upper surface of the substrate.
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