US 11,916,151 B2
Semiconductor structure having fin with all around gate
Chia-Ming Hsu, Hualien County (TW); Yi-Jing Li, Hsinchu (TW); Chih-Hsin Ko, Kaohsiung County (TW); Kuang-Hsin Chen, Jung-Li (TW); Da-Wen Lin, Hsinchu (TW); and Clement Hsingjen Wann, Carmel, NY (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 25, 2021, as Appl. No. 17/357,997.
Prior Publication US 2022/0416090 A1, Dec. 29, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 21/0259 (2013.01); H01L 21/02532 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor fin having a first portion and a second portion over the first portion;
a first conductive region abutting a first lateral surface of the first portion and a first lateral surface of the second portion;
a metal gate having a bottom portion and an upper portion, the bottom portion being between the first portion and the second portion of the semiconductor fin, and the upper portion being over the second portion of the semiconductor fin; and
a first spacer between the bottom portion of the metal gate and the first conductive region.