CPC H01L 29/78603 (2013.01) [H01L 29/0669 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01)] | 20 Claims |
1. A self-healing field-effect transistor (FET) device comprising:
a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 μm;
a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and
at least one channel comprising semi-conducting elongated nanostructures.
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