US 11,916,148 B2
Multi-functional field effect transistor with intrinsic self-healing properties
Hossam Haick, Haifa (IL); and Muhammad Khatib, Haifa (IL)
Assigned to TECHNION RESEARCH ANDDEVELOPMENT FOUNDATION LTD., Haifa (IL)
Filed by TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LIMITED, Haifa (IL)
Filed on Dec. 17, 2022, as Appl. No. 18/067,702.
Application 18/067,702 is a continuation of application No. 17/268,628, granted, now 11,563,122, previously published as PCT/IL2019/050927, filed on Aug. 20, 2019.
Claims priority of provisional application 62/720,132, filed on Aug. 21, 2018.
Prior Publication US 2023/0117378 A1, Apr. 20, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/78603 (2013.01) [H01L 29/0669 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A self-healing field-effect transistor (FET) device comprising:
a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 μm;
a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and
at least one channel comprising semi-conducting elongated nanostructures.