CPC H01L 29/41783 (2013.01) [H01L 29/401 (2013.01); H01L 29/42376 (2013.01); H01L 29/6656 (2013.01); H01L 29/66462 (2013.01); H01L 29/66553 (2013.01); H01L 29/7786 (2013.01)] | 20 Claims |
1. A structure comprising:
a gate comprising:
a first gate section on a barrier layer above a channel layer; and
a second gate section on the first gate section;
a source-side gate sidewall spacer positioned laterally adjacent to the first gate section, wherein the second gate section extends over the source-side gate sidewall spacer;
a source terminal comprising:
a first source region extending through the barrier layer, wherein the first source region has a proximal portion positioned laterally immediately adjacent to a lower portion of the source-side gate sidewall spacer and further has a distal portion; and
a second source region on the distal portion of the first source region; and
a source-side dielectric liner on the proximal portion of the first source region positioned laterally immediately adjacent to an upper portion of the source-side gate sidewall spacer, wherein the source-side dielectric liner is further positioned laterally between the second gate section and the second source region.
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