CPC H01L 29/0653 (2013.01) [H01L 29/66553 (2013.01); H01L 29/66568 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01)] | 20 Claims |
1. A semiconductor device including a FET, comprising:
an isolation insulating layer disposed in a trench of a substrate;
a gate dielectric layer disposed over a channel region of the substrate;
a gate electrode disposed over the gate dielectric layer;
a source and a drain disposed adjacent to the channel region; and
an air spacer formed in a space below the source,
wherein an impurity containing region containing an impurity in an amount higher than the substrate is disposed between the space and the substrate.
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