US 11,916,103 B2
P-type oxide semiconductor and method for manufacturing same
Shizuo Fujita, Kyoto (JP); Kentaro Kaneko, Kyoto (JP); Toshimi Hitora, Kyoto (JP); and Tomochika Tanikawa, Kyoto (JP)
Assigned to FLOSFIA INC., Kyoto (JP); and KYOTO UNIVERSITY, Kyoto (JP)
Filed by FLOSFIA INC., Kyoto (JP); and KYOTO UNIVERSITY, Kyoto (JP)
Filed on Jul. 18, 2022, as Appl. No. 17/866,747.
Application 17/866,747 is a division of application No. 16/313,272, granted, now 11,424,320, previously published as PCT/JP2017/024275, filed on Jun. 30, 2017.
Claims priority of application No. 2016-131156 (JP), filed on Jun. 30, 2016.
Prior Publication US 2022/0352303 A1, Nov. 3, 2022
Int. Cl. H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/47 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/812 (2006.01); H01L 29/872 (2006.01); H01L 33/02 (2010.01); H01L 29/24 (2006.01); H01L 29/739 (2006.01); H01L 29/12 (2006.01); H02M 3/28 (2006.01); H01L 33/26 (2010.01)
CPC H01L 29/06 (2013.01) [H01L 29/12 (2013.01); H01L 29/24 (2013.01); H01L 29/47 (2013.01); H01L 29/739 (2013.01); H01L 29/7391 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01); H01L 33/02 (2013.01); H01L 33/26 (2013.01); H02M 3/28 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an n-type semiconductor layer comprising, as a first major component, a crystalline oxide semiconductor that is gallium oxide;
a p-type semiconductor layer provided on the n-type semiconductor layer, the p-type semiconductor layer comprising, as a second major component, a metal oxide, the metal oxide being a mixed crystal of a d-block metal in a periodic table and gallium oxide, and the d-block metal being contained to be 10% or more in atomic ratio in the metal oxide except oxygen of the metal oxide; and
an electrode,
wherein the semiconductor device is a vertical device.