CPC H01L 29/06 (2013.01) [H01L 29/12 (2013.01); H01L 29/24 (2013.01); H01L 29/47 (2013.01); H01L 29/739 (2013.01); H01L 29/7391 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01); H01L 33/02 (2013.01); H01L 33/26 (2013.01); H02M 3/28 (2013.01)] | 9 Claims |
1. A semiconductor device comprising:
an n-type semiconductor layer comprising, as a first major component, a crystalline oxide semiconductor that is gallium oxide;
a p-type semiconductor layer provided on the n-type semiconductor layer, the p-type semiconductor layer comprising, as a second major component, a metal oxide, the metal oxide being a mixed crystal of a d-block metal in a periodic table and gallium oxide, and the d-block metal being contained to be 10% or more in atomic ratio in the metal oxide except oxygen of the metal oxide; and
an electrode,
wherein the semiconductor device is a vertical device.
|