US 11,916,071 B2
Semiconductor device having epitaxy source/drain regions
Yi-Jing Lee, Hsinchu (TW); Kun-Mu Li, Hsinchu County (TW); Ming-Hua Yu, Hsinchu (TW); and Tsz-Mei Kwok, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Feb. 23, 2022, as Appl. No. 17/678,856.
Application 16/714,465 is a division of application No. 15/895,987, filed on Feb. 13, 2018, granted, now 10,510,753, issued on Dec. 17, 2019.
Application 17/678,856 is a continuation of application No. 16/714,465, filed on Dec. 13, 2019, granted, now 11,276,692.
Application 15/895,987 is a continuation of application No. 14/875,504, filed on Oct. 5, 2015, granted, now 9,922,975, issued on Mar. 20, 2018.
Prior Publication US 2022/0181320 A1, Jun. 9, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first semiconductor fin on a substrate;
a second semiconductor fin next to the first semiconductor fin, the first semiconductor fin having a first side facing the second semiconductor fin and a second side facing away from the second semiconductor fin, the second semiconductor fin having a first side facing the first semiconductor fin and a second side facing away from the first semiconductor fin;
a first epitaxy structure on the first semiconductor fin, wherein the first epitaxy structure laterally extends a first width from the first side of the first semiconductor fin toward the second semiconductor fin, and a second width from the second side of the first semiconductor fin in a direction away from the second semiconductor fin, and the first width of the first epitaxy structure is greater than the second width of the first epitaxy structure;
a second epitaxy structure on the second semiconductor fin, wherein the second epitaxy structure laterally extends a first width from the first side of the second semiconductor fin toward the first semiconductor fin, and a second width from the second side of the second semiconductor fin in a direction away from the first semiconductor fin, and the first width of the second epitaxy structure is greater than the second width of the second epitaxy structure;
a first fin sidewall spacer adjacent the first side of the first semiconductor fin; and
a second fin sidewall spacer adjacent the second side of the first semiconductor fin and having a top end higher than a top end of the first fin sidewall spacer.