US 11,915,973 B2
Self-assembled monolayers as sacrificial capping layers
Ainhoa Romo Negreira, Leuven (BE); Yumiko Kawana, Nirasaki (JP); and Dina Triyoso, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Dec. 8, 2020, as Appl. No. 17/115,231.
Claims priority of provisional application 62/946,243, filed on Dec. 10, 2019.
Prior Publication US 2021/0175118 A1, Jun. 10, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/76834 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02282 (2013.01); H01L 21/02301 (2013.01); H01L 21/02318 (2013.01); H01L 21/68764 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A substrate processing method, comprising:
providing a substrate containing a metal surface and a dielectric material surface;
selectively forming a sacrificial capping layer containing a self-assembled monolayer on the metal surface, wherein the sacrificial capping layer prevents oxidation and contamination of the metal surface while waiting for further processing of the substrate;
removing the sacrificial capping layer to restore the metal surface; and
after removing the sacrificial capping layer, selectively depositing a dielectric film on the dielectric material surface relative to the restored metal surface.