CPC H01L 21/28568 (2013.01) [C23C 16/34 (2013.01); C23C 16/52 (2013.01)] | 17 Claims |
1. A method of processing a substrate, comprising:
forming a metal-containing film on the substrate by sequentially performing:
(a) supplying a first gas, which contains a metal and a halogen, and a first reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value in a predetermined pressure range, wherein (a) includes a time period of simultaneously supplying the first gas and the first reducing gas and a time period of supplying the first gas;
(b) removing the first gas and the first reducing gas that remain in the process chamber;
(c) supplying a second gas to the substrate; and
(d) removing the second gas remaining in the process chamber.
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