US 11,915,935 B2
Method for producing a semiconductor component comprising performing a plasma treatment, and semiconductor component
Andreas Biebersdorf, Regensburg (DE); Stefan Illek, Donaustauf (DE); Christoph Klemp, Regensburg (DE); Ines Pietzonka, Donaustauf (DE); and Petrus Sundgren, Lappersdorf (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Appl. No. 17/282,519
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Oct. 2, 2019, PCT No. PCT/EP2019/076733
§ 371(c)(1), (2) Date Apr. 2, 2021,
PCT Pub. No. WO2020/070202, PCT Pub. Date Apr. 9, 2020.
Claims priority of application No. 10 2018 124 576.9 (DE), filed on Oct. 5, 2018.
Prior Publication US 2021/0351037 A1, Nov. 11, 2021
Int. Cl. H01L 21/223 (2006.01); H01L 21/225 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 33/30 (2010.01)
CPC H01L 21/2233 (2013.01) [H01L 21/2258 (2013.01); H01L 31/184 (2013.01); H01L 33/0095 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for producing a semiconductor device, comprising:
performing a plasma treatment of an exposed surface of a semiconductor material with halogens, with the exposed surface being substantially not etched by the plasma treatment;
performing an oxygen plasma treatment after performing the plasma treatment with halogens; and
performing a diffusion process with dopants on the exposed surface after performing the oxygen plasma treatment.