CPC H01L 21/2233 (2013.01) [H01L 21/2258 (2013.01); H01L 31/184 (2013.01); H01L 33/0095 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/30 (2013.01)] | 20 Claims |
1. A method for producing a semiconductor device, comprising:
performing a plasma treatment of an exposed surface of a semiconductor material with halogens, with the exposed surface being substantially not etched by the plasma treatment;
performing an oxygen plasma treatment after performing the plasma treatment with halogens; and
performing a diffusion process with dopants on the exposed surface after performing the oxygen plasma treatment.
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