US 11,915,934 B2
Diamond semiconductor system and method
Adam Khan, Tiburon, CA (US)
Assigned to AKHAN SEMICONDUCTOR, INC., Gurnee, IL (US)
Filed by AKHAN Semiconductor, Inc., Gurnee, IL (US)
Filed on Feb. 9, 2023, as Appl. No. 18/167,011.
Application 14/595,320 is a division of application No. 13/725,978, filed on Dec. 21, 2012, granted, now 8,933,462.
Application 18/167,011 is a continuation of application No. 17/329,035, filed on May 24, 2021, granted, now 11,605,541.
Application 17/329,035 is a continuation of application No. 16/052,575, filed on Aug. 1, 2018, granted, now 11,043,382.
Application 16/052,575 is a continuation of application No. 15/287,692, filed on Oct. 6, 2016, abandoned.
Application 15/287,692 is a continuation of application No. 14/595,320, filed on Jan. 13, 2015, abandoned.
Claims priority of provisional application 61/578,364, filed on Dec. 21, 2011.
Claims priority of provisional application 61/578,371, filed on Dec. 21, 2011.
Prior Publication US 2023/0187209 A1, Jun. 15, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 21/768 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/324 (2006.01); H01L 29/36 (2006.01)
CPC H01L 21/043 (2013.01) [H01L 21/02425 (2013.01); H01L 21/02527 (2013.01); H01L 21/042 (2013.01); H01L 21/0415 (2013.01); H01L 21/0435 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/324 (2013.01); H01L 21/76871 (2013.01); H01L 29/1602 (2013.01); H01L 29/36 (2013.01); H01L 29/6603 (2013.01); H01L 29/868 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A doped diamond film structure, comprising:
a polycrystalline diamond material having less than micrometer grain size;
a first set of dopant atoms positioned within at least one layer of less than 900 nm thickness of the polycrystalline diamond;
a plurality of pathways created by positioning of the first set of dopant atoms within the at least one layer of less than 900 nm thickness; and
a second set of dopant atoms larger than the first set of dopant atoms positioned within the polycrystalline diamond material at least in part by passage through the plurality of pathways.