US 11,915,770 B2
Method of reducing reliability degradation of nonvolatile memory device, nonvolatile memory device using the same and method of testing nonvolatile memory device using the same
Minseok Kim, Hwaseong-si (KR); Junyong Park, Seoul (KR); Doohyun Kim, Hwaseong-si (KR); and Ilhan Park, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonoggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 4, 2022, as Appl. No. 17/736,395.
Claims priority of application No. 10-2021-0118285 (KR), filed on Sep. 6, 2021.
Prior Publication US 2023/0072218 A1, Mar. 9, 2023
Int. Cl. G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01); G11C 29/10 (2006.01); G11C 16/16 (2006.01)
CPC G11C 16/3495 (2013.01) [G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 29/10 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of reducing reliability degradation of a nonvolatile memory device that includes a plurality of memory cells connected to a plurality of wordlines, the method comprising:
providing the nonvolatile memory device in which initial data having an initial threshold voltage distribution is stored in the plurality of memory cells connected to the plurality of wordlines;
before a first process is performed on the nonvolatile memory device, performing a first write operation such that first data having a first threshold voltage distribution is stored into memory cells connected to first wordlines, the first process being a process that causes reliability degradation of the plurality of memory cells, the first threshold voltage distribution being different from the initial threshold voltage distribution, the first wordlines having a degree of reliability degradation less than a reference value among the plurality of wordlines; and
before the first process is performed on the nonvolatile memory device, performing a second write operation such that second data having a second threshold voltage distribution is stored into memory cells connected to second wordlines, the second threshold voltage distribution being different from the first threshold voltage distribution, the second wordlines having a degree of reliability degradation greater than or equal to the reference value among the plurality of wordlines.