US 11,915,767 B2
Negative voltage switching device and non-volatile memory device using the same
Jin Hyung Kim, Goyang-si (KR); Sung Bum Park, Seongnam-si (KR); and Kee Sik Ahn, Hwaseong-si (KR)
Assigned to KEY FOUNDRY CO., LTD., Cheongju-si (KR)
Filed by KEY FOUNDRY CO., LTD., Cheongju-si (KR)
Filed on Jan. 4, 2022, as Appl. No. 17/568,190.
Claims priority of application No. 10-2021-0111861 (KR), filed on Aug. 24, 2021.
Prior Publication US 2023/0065879 A1, Mar. 2, 2023
Int. Cl. G11C 16/14 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01); H03K 17/687 (2006.01); H03K 17/693 (2006.01)
CPC G11C 16/30 (2013.01) [G11C 16/0433 (2013.01); G11C 16/14 (2013.01); H03K 17/6872 (2013.01); H03K 17/693 (2013.01); G11C 2216/04 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A negative voltage switching device, comprising:
a first switching circuit configured to transmit a first negative voltage;
a second switching circuit configured to transmit a second negative voltage; and
a switching selection circuit configured to select one of the first switching circuit or the second switching circuit for transmitting one of the first negative voltage and the second negative voltage to an output terminal, wherein the switching selection circuit comprises:
a first switching selection module connected to the first switching circuit and the second switching circuit; and
a second switching selection module connected to the second switching circuit.