US 11,915,762 B2
Apparatus and method for programming data in a non-volatile memory device
Tae Hun Park, Gyeonggi-do (KR); Dong Hun Kwak, Gyeonggi-do (KR); and Hyung Jin Choi, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Dec. 10, 2021, as Appl. No. 17/547,671.
Claims priority of application No. 10-2021-0083197 (KR), filed on Jun. 25, 2021.
Prior Publication US 2022/0415401 A1, Dec. 29, 2022
Int. Cl. G11C 16/00 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 16/24 (2006.01)
CPC G11C 16/10 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/3454 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory structure including at least one non-volatile memory cell configured to store multi-bit data; and
a controller configured to:
perform a program verification after a first program pulse is applied to the at least one non-volatile memory cell during a data program operation, the data program operation including applying a plurality of program pulses to program multi-bit data to the at least one non-volatile memory cell and the first program pulse being one of the plurality of program pulses,
determine a program mode for the at least one non-volatile memory cell based on a result of the program verification, and
change at least one of a level of a first control voltage based on the program mode, the first control voltage applied to a drain select line (DSL) coupled to the at least one non-volatile memory cell,
wherein the program mode corresponding to a second program pulse applied after the first program pulse is determined as one selected from a first mode, a second mode, and a third mode, the first mode to apply the second program pulse to change or adjust a threshold voltage of the at least one non-volatile memory cell by a first level which is equal to, or larger than, that caused by the first program pulse; the second mode to apply the second program pulse to change or adjust the threshold voltage of the at least one non-volatile memory cell by a second level which is smaller than that caused by the first program pulse; and the third mode to apply the second program pulse to the at least one non-volatile memory cell of which a change of the threshold voltage is inhibited.